APT1001RBVR |
RFQ for APT1001RBVR Required Field |
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| Technical/Catalog Information | APT1001RBVRG |
| Vendor | Microsemi-PPG |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25° C | 11A |
| Rds On (Max) @ Id, Vgs | 1 Ohm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 3660pF @ 25V |
| Power - Max | 280W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 225nC @ 10V |
| Package / Case | TO-247 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | APT1001RBVRG APT1001RBVRG |
| Product | Manufacturers | Pack | D/C |
| APT1001RBVR | - | TO-247 | 05+ |
Features |
| Faster Switching 100% Avalanche Tested Lower Leakage Popular SOT-247 Package |
| Symbol | Parameter | APT1001RBVR | UNIT |
| VDSS | Drain-Source Voltage | 1000 | Volts |
| ID | Continuous Drain Current @ Tc = 25 °C |
11 | Amps |
| IDM | Pulsed Drain Current |
44 | |
| VGS | Gate-Source Voltage Continuous | ±30 | Volts |
| VGSM | Gate-Source Voltage Transient | ±40 | |
| PD | Total Power Dissipation @ TC = 25 | 280 | Watts |
| Linear Derati | 2.24 | W/°C | |
| TJ,TSTG | Operating and Storage Junction Temperature Range | -55to 150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec. | 300 | |
| IAR | Avalanche Current (Repetitive and Non-Repetitive) |
11 | Amps |
| EAR | Repetitive Avalanche Energy | 30 | mJ |
| EAS | Single Pulse Avalanche Energy | 1210 |
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| APT1001RBVR | TO-247 | |
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| APT1001R1SN | ||
| APT1001R1HVR | ||
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| APT1001R1BVFR | ||
| APT1001R1BN | ||
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